Surface activation with ion beam in ultra-high vacuum enables strong covalent bonding without annealing, which can achieve high strength and thermal stress free bonding between heterogeneous materials, e.g., SiC, Ga₂O₃, and diamond, without interfacial oxide. It is applicable to compound substrates, MEMS, thermal management systems, multi-junction solar cells, optical crystal integration, flexible electronics, etc.
Plasma activation and spin-cleaning create -OH-rich wafer surfaces for pre-bonding at room temperature via van der Waals forces, followed by annealing to achieve high-strength dielectric bonds and Cu-Cu interconnects. Applications include POI/SOI substrates, InP/GaAs-SiO₂ heterointegration, MEMS wafer-level capping, and 3D-stacking CIS, memories and Micro-LEDs.
Wafers are bonded by thermo-compression. Precise pressure and temperature control enables high-quality bonding via metal, eutectic, or adhesive interlayer. Integrated anodic bonding allows permanent glass-Si joining. Rapid thermal cycling improves throughput. Applications include metal bonding and glass capping in MEMS and optoelectronics.
Device wafer is temporarily bonded to carrier via adhesive and then debonded by thermal-slide or laser treatment after backside processing (e.g., thinning). Capable of ≤3μm TTV, high temperature resistance, and ultra-thin device wafer. Applications include advanced packaging (fan-out, 2.5D, and 3D), RF/power, MEMS, and optoelectronics.
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