Features
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- Dual High-precision Alignment Modes
- Supports Face-to-face and infrared penetration alignment to meet diverse process requirements.
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- Industry-leading Bonding Accuracy
- Face-to-face: Alignment accuracy ≤±30 nm, bonding accuracy ≤±200 nm. Infrared Penetration: Alignment accuracy ≤±30 nm, bonding accuracy ≤±100 nm.
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- Precise Bond Wave Propagation Control
- Incorporates an optimized zonal vacuum chuck with independently adjustable pressure control for each partition, enabling programmable bonding wave propagation to accommodate complex wafer warpage.
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- Intelligent Overlay Compensation
- Performs high-throughput full-area overlay inspection after bonding. Results are fed back to the bonding module for automatic overlay compensation.
Specifications
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ltemsSpecification
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Wafer size6, 8, 12 inch
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Wafer loadCassette, SMIF, Foup Optional
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Bonding accuracy±0.5μm; ±0.2μm; ±0.1μm
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Bonding strength≥2.0J/㎡ (after annealing)
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CapacityInfrared alignment: ≥ 50 pairs/h (dual module)
FTF visible light: ≥ 12 pairs/h (single module) -
Multi-module integratedPre-align, plasma activation, clean, align bond, accuracy inspection, defect detection, debonding
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Chemical cleanOptional
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Internal cleanlinessFFU control, ISO Class 1
