Features
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- Fully Automatic Control
- Supports CST IN and CST OUT, ensuring excellent process stability.
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- Modular Design
- Integrates independent deposition chambers and activation & pressurization functions, improving production capacity while optimizing equipment space utilization.
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- Highly Integrated Alignment Method
- The alignment module and optical system feature compact dimensions and high integration.
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- High Compatibility
- Flexible regulated design of the bonding interlayer can be achieved by replacing target materials.
Specifications
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ItemsSpecification
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Wafer size4-12 inch
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Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, as well as metals, glass, etc.
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Capacity≥6 pairs/h
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Wafer loadCassette
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Maximum pressure100kN
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Dedicated sputter deposition chamberoptional
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Quantity of targets2
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Alignment method & accuracy≤±50 μm@edge alignment; ≤±1 μm@mark alignment
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Bonding strengthStandard: Si-Si≥1.5 J/m²@RT
Enhanced: SiO₂-SiO₂≥2 J/m²@RT
