Features
-
- Fully Automatic Control
- Supports CST IN and CST OUT, ensuring excellent process stability.
-
- Modular Design
- Integrates independent deposition chambers and activation & pressurization functions, improving production capacity while optimizing equipment space utilization.
-
- Highly Integrated Alignment Method
- The alignment module and optical system feature compact dimensions and high integration.
-
- High Compatibility
- Flexible regulated design of the bonding interlayer can be achieved by replacing target materials.
Specifications
-
ItemsSpecification
-
Wafer size4-12 inch
-
Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, Glass, etc.
-
Capacity≥6 pairs/h
-
Wafer loadCassette
-
Maximum pressure100 kN
-
Dedicated sputter deposition chamberoptional
-
Quantity of targets2
-
Alignment method & accuracyEdge alignment: ±50 μm; Mark alignment: ±2 μm
-
Bonding strengthStandard: Si-Si ≥ 1.5 J/m² @ RT
Enhanced: SiO₂-SiO₂ ≥ 2 J/m² @ RT
