Features
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- High Process Compatibility
- Supports wafers up to 12 inches with optional anodic bonding function. Compatible with upstream alignment/photolithography systems.
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- Precision Temperature & Pressure Control
- Temperature uniformity ±1.2%, pressure control accuracy ≤±1%, and pressure uniformity ≤3%.
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- Hydrogen Radical Activation
- Hydrogen radicals enable low-temperature reduction (at 180°C) for metal surfaces (e.g., Cu), reducing bonding temperature and enhancing quality.
Specifications
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ItemsSpecification
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Wafer size4-12 inch
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Bondable materialsSi, Cu, Au, Au-Sn, Al-Ge, etc.
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Maximum temp.550℃
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Maximum bonding force100 kN
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Heating rate30℃/min
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Temp. uniformity±1.5% or ±2°C, which is better
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pressure uniformity≤±5%
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Anodic voltage/current≤ 2kV, ≤100mA
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Post-bonding accuracy≤5 μm, ≤2 μm
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Bonding atmosphereVacuum, formic acid, hydrogen radical environment, inert gas (optional)
