Features
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- High-speed and Precision Alignment
- Face-to-face alignment with accuracy ≤±200 nm; metal/eutectic bonding accuracy ≤±2 μm.
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- Multi-material Compatibility
- Supports metal bonding, eutectic bonding, anodic bonding, and adhesive thermocompression bonding.
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- High-efficiency Batch Production
- Configurable with up to 6 bonding modules for multi-station simultaneous operation, significantly boosting throughput.
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- Hydrogen Radical Activation
- Hydrogen radicals enable low-temperature reduction (at 180°C) for metal surfaces (e.g., Cu), reducing bonding temperature and enhancing quality.
Specifications
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ItemsSpecification
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Wafer size6, 8, 12 inch
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Bondable materialsSi, Cu, Au, Au-Sn, Al-Ge, etc.
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Maximum temp.550℃
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Maximum bonding force100 kN
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Heating rate30°C/min
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Temp. uniformity±1.5% or ±2°C, which is better
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Pressure uniformity≤±5%
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Anodic voltage/current≤ 2 kV, ≤ 100 mA
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Post-bonding accuracy≤5 μm, ≤2 μm
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Wafer loadCassette, SMIF, FOUP Optional
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Bonding atmosphereVacuum, formic acid, hydrogen radical environment, inert gas (optional)
