Features
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- Full-size Compatible Bonding
- Suitable for the bonding requirements of samples of different sizes, including those with irregular shapes.
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- Cryopump-based Ultra-fast Vacuum Pumping
- The main chamber of the equipment is equipped with a cryopump, which achieves a rapid ultra-high vacuum environment and effectively reduces the impact of water vapor on bonding.
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- Ion Beam Activation and Deposition of Nanoscale Films
- A stable ion beam is adopted to efficiently remove surface oxides and contaminants, and can bombard the target to achieve sputter deposition of nanoscale films.
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- Face-Down Transfer for Particle Control
- The bonding surface faces downward during sample movement, effectively reducing the impact of particles on bonding.
Specifications
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ltemsSpecification
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Wafer size≤12 inch, compatible with custom shaped wafer
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Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, Diamond, Glass etc.
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Wafer loadManual
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Maximum pressure80kN
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Surface treatment methodSputtering deposition
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Sputtering targets4, rotatable
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Bonding strengthStandard: Si-Si≥1.5 J/m²@RT
Enhanced: SiO₂-SiO₂≥2 J/m²@RT
