Features
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- Broad Chip Size Compatibility
- Optimized chip pick and place technology supports chip thickness down to 35μm, size spanning 1*1mm to 32*32mm.
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- Alignment Modes Compatibility
- Inter-chip coaxial alignment: Bonding accuracy ≤±500 nm. Infrared penetration alignment: Bonding accuracy ≤±200 nm.
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- Optional Bottom-to-top Bonding
- In addition to top-to-bottom bonding, the system offers bottom-to-top bonding, that the wafer bonding face remains downward, eliminating the need for chip flipping, thus significantly reducing particle contamination risks.
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- Real-time Overlay Measurement & Feedback Control
- Instant post-bonding overlay measurement, with automatic algorithmic compensation in subsequent bonding steps, ensures consistent bonding accuracy.
Specifications
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ltemsSpecification
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TF loadport2
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FOUP loadport2
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Bonding force rangeMax 30N
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Post-bonding accuracy≤±500nm@Inter-chip coaxial alignment
≤±200nm@ Infrared transmissive alignment -
Chip size5*8mm—32*32mm
1*1mm—32*32mm -
Wafer size8/12 inch
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UPHSingle bonding head: >800@200nm@3σ
Single bonding head: >400@50nm@3σ -
ProcessCu/SiO₂ hybrid bonding、Cu/SiCN hybrid bonding
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Multi-module integratedActivation, clean, UV debond, chip pick and place, alignment, bonding, and detection
