Features
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- Broad Chip Size Compatibility
- Optimized chip pick and place technology supports chip thickness down to 35μm, size spanning 1*1mm to 32*32mm.
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- Alignment Modes Compatibility
- Inter-chip coaxial alignment: Bonding accuracy ≤±500 nm. Infrared penetration alignment: Bonding accuracy ≤±200 nm.
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- Optional Bottom-to-top Bonding
- In addition to top-to-bottom bonding, the system offers bottom-to-top bonding, that the wafer bonding face remains downward, eliminating the need for chip flipping, thus significantly reducing particle contamination risks.
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- Real-time Overlay Measurement & Feedback Control
- Instant post-bonding overlay measurement, with automatic algorithmic compensation in subsequent bonding steps, ensures consistent bonding accuracy.
Specifications
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ItemsSpecification
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TF loadport2
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FOUP loadport2
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Bonding force rangeMax 30 N
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Post-bonding accuracy≤500 nm @ Inter-chip coaxial alignment
≤200 nm @ Infrared transmissive alignment -
Chip size5×8 mm—32×32 mm
1×1 mm—32×32 mm -
Wafer size8/12 inch
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UPHSingle bonding head: >800 @ 200 nm @ 3σ alignment accuracy
Single bonding head: >400 @ 50 nm @ 3σ alignment accuracy -
ProcessCu/SiO₂ hybrid bonding, Cu/SiCN hybrid bonding
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Multi-module integratedPlasma activation, clean, UV, die pick-up, aligner, bond, detection
