Features
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- Dual-Mode Process Integration
- A highly flexible modular design combines C2W and W2W hybrid bonding.
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- 30% Reduction in Investment Cost
- Integrated architecture eliminates redundant modules compared to separately purchasing C2W and W2W systems.
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- 60% Reduction in Footprint
- Compact design minimizes floor space compared to separately purchasing C2W and W2W systems.
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- Enhanced Module Utilization
- Plasma activation and cleaning modules can be used for W2W bonding during C2W bonding operations, eliminating idle time and maximizing efficiency.
Specifications
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ItemsSpecification
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Wafer size8, 12 inch
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Chip size5*8 mm—32*32 mm
1*1 mm—32*32 mm -
W2W bonding accuracy＜200 nm
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W2W maximum bonding force5N
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W2W Capacity≥12 pairs/h
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C2W Bonding accuracy≤500 nm @ inter-chip coaxial alignment
≤200 nm @ infrared transmissive alignment -
C2W maximum bonding force30N
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C2W capacitySingle bonding head: >700 @ 200 nm @ 3σ alignment accuracy
Single bonding head: >400 @ 50 nm @ 3σ alignment accuracy -
Pressure control accuracy±0.5 N
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Pressure control resolution±0.1 N
