Features
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- Automated Leveling & Alignment
- Automated chip-to-chip leveling and alignment eliminate manual calibration, achieving bonding accuracy ≤±300 nm.
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- Broad Chip Size Compatibility
- Supports chips ranging from 0.4×0.4 mm microchips to 50×50 mm large-array chips.
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- Rapid heating/cooling capability
- Heats from RT to 450°C in ≤2.2s, and gas-accelerated cools, minimizing thermal mismatch deformation, preventing bump shorting, and improving bonding efficiency.
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- Hydrogen Radical Activation Support
- Hydrogen radicals enable low-temperature reduction (at 180°C) for metal surfaces (e.g., Cu), reducing bonding temperature and enhancing quality.
Specifications
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ItemsSpecification
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Sample sizeOption 1: 0.4×0.4-30×30 mm
Option 2: 0.4×0.4-50×50 mm
(Customizable up to 100×100 mm) -
Bonding force range1-3000N
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Pressure stability1-50 N, accuracy ≤ ±0.5 N
51-3000 N, accuracy ≤ ±2 N -
Post-bonding accuracy≤ ±1 μm; ≤ ±500 nm; ≤ ±300 nm
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Bonder temperatureRT-450℃
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Bonder stability±0.5℃
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Bonder heating rate (RT-450) ℃)6 s @ 52×52 mm; 2.2 s @ 32×32 mm
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Cooling methodGas cooling
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Chamber atmosphereInert atmosphere, hydrogen radical (with vacuum system)
