Features
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- Real-time Automated Leveling & Alignment
- Automated leveling between chips and wafers with real-time parallelism monitoring at bonding positions, achievs bonding accuracy up to ±500 nm.
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- Dual Activation Modes
- Independent hydrogen radical and plasma activation chambers. Hydrogen radicals enable low-temperature reduction (at 180°C) on metal surfaces (e.g., Cu).
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- Rapid heating/cooling capability
- Heats from RT to 450°C in ≤2.2s, and gas-accelerated cools, minimizing thermal mismatch deformation, preventing bump shorting, and improving bonding efficiency.
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- Full-process Inert Atmosphere
- Post-activation transfer and bonding occur entirely in an inert atmosphere to avoid air exposure and oxidation, ensuring higher bonding quality.
Specifications
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ltemsSpecification
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Bonding force range and stabilityOption 1: -30~500 N（0.25 N or 1%)
Option 2: 10~3000 N (±2 N） -
Chip size0.4*0.4~32*32/0.4*0.4~50*50/1*1~70*70 mm
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C2S type lower wafer size10*10 mm-120*300 mm
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C2W type lower wafer size8, 12 inch
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Bonder temperatureRT~450℃
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Bonder stability±0.5℃
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Bonder heating rate(RT-450℃)2.2 s@32*32 mm
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Post-bonding accuracy≤±2μm; ≤±1μm; ≤±500nm
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Activation chamber atmosphereHydrogen radical activation, plasma activation.
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Bond chamber atmosphereInert atmosphere
