Features
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- High-throughput and High Stability
- Cassette-based automated loading/unloading and high-energy ion beam enable efficient batch processing. Proprietary ion source technology ensures long-term stability with WTW (Wafer-to-wafer) consistency ≤2 nm.
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- Reduced Film Thickness Range & Roughness
- Optimized beam energy distribution and intelligent dwell functions reduce film thickness range to <1 nm and surface roughness to <0.5 nm.
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- Damage-free Precision Processing
- Low-current-density mode eliminates charge-induced damage while maintaining high etch efficiency. No photoresist hardening/residue. Significantly reduces wafer breakage.
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- Unique Process Flexibility
- Proprietary oxidation process tailored for SAW device frequency trimming, combined with high-resolution beam spots and wide dynamic range, enables flexible adaptation to multiple complex process demands.
Specifications
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ltemsSpecification
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Wafer size4, 6, 8, 12 inch
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Wafer loadCassette/Foup (optional)
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Wafer calibrationAligner
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Removal rate20 keV: ≥70 Å*cm² /s@SiO₂
60 keV: ≥400 Å*cm² /s@SiO₂ -
Process gasNF3/N2/Ar/O2/SF6(optional)
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Beam intensity＞100μA @Ar
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Beam spot sizeFWHM: 5-10 mm (adjustable)
