Core Process 1：W2W Hybrid Bonding

Core Equipment: SAB6210HB Fully Automatic W2W Hybrid Bonding Equipment

Supports high-volume production of large-size wafers

High bonding precision and high bonding strength

Multi-module integration: pre-alignment, plasma activation, cleaning, alignment bonding, accuracy inspection, debonding

FFU micro-environment control, up to ISO Class 1

6-12 inch

Wafer size

≥2.0 J/m²
Si-SiO₂

Bonding strength after annealing

＜200 nm

Bonding accuracy

WPH≥12

Throughput

Core Process 2：C2W Hybrid Bonding

Core Equipment: SAB8210CW Fully Automatic C2W Hybrid Bonding Equipment

High-precision bonding, post-bonding precision ≤ 200 nm (infrared transmission alignment)

High bonding throughput, single bonding head throughput UPH >400 @50 nm @3σ

Compatible with chip thickness down to 35 μm and sizes from 1×1 mm to 32×32 mm

Mapping recall/creation and KGD selection functions

8-12 inch

Wafer size

1×1 mm

Minimum chip size

35 μm

Minimum chip thickness

Optional bottom-to-top bonding

Bonding direction

≤200 nm

Bonding accuracy

UPH>400@50nm@3σ UPH>800@200nm@3σ

Single bonding head throughput

Core Process 3：Fluxless TCB

Core Equipment: SAB8310CW Fully Automatic C2S/C2W TCB Bonding Equipment

Hydrogen radical/plasma oxidation reduction technology, eliminating flux coating/cleaning steps

Avoids flux residue and improves reliability

Supports large-die and fine-pitch bonding

Enables Cu-Cu direct bonding

1×1-70×70 mm

chip size

8-12 inch

Wafer size

3000 N

Maximum bonding force

±500 nm

Bonding accuracy

Hydrogen radical and plasma activation

Activation chambers

Core Process 4：Temporary Bonding/Debonding

Core Equipment: SAB64 Series Temporary Bonding & Debonding Equipment

Post-bonding TTV ≤ 3 μm

Laser debonding throughput WPH ≥15

Multi-module integration

4-12 inch

Wafer size

5%

Coating uniformity

100 N-20 kN

Bonding force

WPH≥3

Single bonding chamber throughput

≤3 μm

Post-bonding TTV

Core Process 4：Temporary Bonding/Debonding

Core Equipment: SAB64 Series Temporary Bonding & Debonding Equipment

Post-bonding TTV ≤ 3 μm

Laser debonding throughput WPH ≥15

Multi-module integration

4-12 inch

Wafer size

WPH≥15

Laser debonding throughput

≥99.9%

Residue removal rate