- Solution Overview
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Targeting the heat dissipation challenges of GaN power devices, iSABers offers a substrate transfer + room-temperature bonding solution: transferring the GaN epitaxial layer onto a diamond substrate to significantly enhance heat dissipation.
- Core Solutions
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- Core Process：Room-temperature Bonding
Core Equipment: SAB6100 Semi-automatic / SAB6110 Fully Automatic UHV RT Bonding Equipment
- Direct bonding after surface activation under ultra-high vacuum, with no heating needed
- Avoids thermal stress caused by thermal expansion coefficient mismatch between dissimilar materials (Si-GaN and diamond)
- Optional intermediate layers (Si, Al₂O₃, Ti, etc.) for precise control of interface properties
- SAB6100-Semi-automatic
- UHV RT Bonding Equipment
-
- Core Process：Room-temperature Bonding
Core Equipment: SAB6100 Semi-automatic / SAB6110 Fully Automatic UHV RT Bonding Equipment
- Direct bonding after surface activation under ultra-high vacuum, with no heating needed
- Avoids thermal stress caused by thermal expansion coefficient mismatch between dissimilar materials (Si-GaN and diamond)
- Optional intermediate layers (Si, Al₂O₃, Ti, etc.) for precise control of interface properties
- SAB6110-Fully Automatic
- UHV RT Bonding Equipment
- Core Advantages
- Super-atoms Beam Polishing
- Achieves sub-nanometer roughness without sourface damage.
- Room-temperature Bonding
- No heating needed, solving the thermal mismatch issue of heterogeneous materials
- Flexible Intermediate Layers
- Supports multiple materials such as Si, Al₂O₃, and Ti, with on-demand tunability.
- Full-process Coverage
- Polishing → bonding → substrate transfer, delivered as a one-stop solution
- Applications
- GaN power amplifiers
- GaN HEMT devices
- Other thermal management applications, such as AI computing chips, GaAs devices and gallium oxide devices
