Silicon Photonics Heterogeneous Integration Solutions

Industry Challenges

Silicon photonic device performance is highly dependent on the thickness uniformity of the SOI top silicon layer. Thickness variation directly causes resonant wavelength drift (thickness 3σ = ±1 nm → wavelength drift ±1.4 nm).
Heterogeneous integration of multiple materials (Si, SiN, LN, InP, GaAs, etc.) involves lattice mismatch and thermal expansion coefficient mismatch.
Waveguide sidewall roughness causes optical scattering loss, and traditional CMP cannot handle non-planar structures.
LNOI wafers are limited in size (max. 8 inch), which is incompatible with 12 inch silicon photonic wafers.
Solution Overview
Targeting the challenges of silicon photonics heterogeneous integration, iSABers offers a full-process solution combining super-atoms beam surface treatment and heterogeneous bonding. Super-atoms beam technology enables wafer-level thickness uniformity correction (TRIM), waveguide sidewall polishing, and surface roughness optimization; combined with C2W/W2W heterogeneous bonding, it enables heterogeneous integration of various optical materials such as LNOI, InP, and GaAs with silicon photonic wafers.
Core Solutions

Core Advantages
Super-atoms Beam TRIM
Waveguide layer thickness range can be optimized to 1 nm without significantly increasing surface roughness.
Waveguide Sidewall Polishing
Eliminates etched sidewall ripples and significantly reduces optical scattering loss.
High-precision Heterogeneous Bonding
C2W supports both bare-chip heterogeneous integration and high-precision hybrid bonding of patterned chips.
Full-process Coverage
TRIM + polishing + bonding, delivered as a one-stop solution
Applications
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