POI (Piezoelectric on Insulator) consists of a high-resistivity silicon substrate, a buried oxide layer as the intermediate layer, and a thin, uniform mono-LT film on top. In RF applications, POI is a critical material for 5G/6G filters and resonators, thanks to its high-frequency and low-loss characteristics. Heterogeneous integration technology enables ultra-thin monocrystalline layers with a high electromechanical coupling coefficient, excellent temperature stability, and high-Q resonance. Its core specifications are benchmarked against those of leading international companies, and its performance meets the requirements of high-end applications, making it ideal for high-performance filters.