TFLN/TFLT Substrate
TFLN/TFLT (Thin-Film Lithium Niobate/Tantalate on Insulator) are high-quality monocrystalline thin films fabricated via the H-Cut process. Leveraging its exceptional electro-optic properties (r₃₃ ≈ 30-80 pm/V), TFLN has become the material of choice for high-speed optical modulators (100 GHz+) and quantum photonic devices. Its strong second-order nonlinearity (χ⁽²⁾) enables efficient wavelength conversion and entangled photon pair generation. It has been validated by leading domestic optical module companies and has secured overseas tier-one customers. TFLT offers superior broadband transparency, making it ideal for mid-infrared sensing applications. With a higher optical damage threshold (>500 MW/cm²) and excellent thermal stability (dn/dT ≈ 1.5×10⁻⁵/K), TFLT excels in high-power optical systems. Both materials are compatible with CMOS processes. TFLN focuses on high-speed communications and quantum optics, while TFLT shines in infrared optoelectronics and acousto-optic hybrid systems. Together, they drive advances in next-generation integrated photonic devices.
TFLN (TFLT) Substrate (6 inch)

  • Items
  • Specification
  • Diameter
  • 150±0.2 mm
  • LN/LT Crystal Orientation
  • X°±0.3°
  • LN/LT Layer Thickness
  • (300~600 nm) ±20 nm
  • Front Side Surface Finish
  • <0.5 nm
  • Buried Oxide Layer Thickness
  • (500~8200 nm) ±20 nm
  • Si Orientation
  • <100>
  • TTV
  • ≤5 μm
  • BOW
  • -40~40 μm
  • Warp
  • ≤50 μm
  • Total Thickness
  • 675±25 μm


TFLN (TFLT) Substrate (8 inch)

  • Items
  • Specification
  • Diameter
  • 200±0.2 mm
  • LN/LT Crystal Orientation
  • X°±0.3°
  • LN/LT Layer Thickness
  • (300~600 nm)±20 nm
  • Front Side Surface Finish
  • <0.5 nm
  • Buried Oxide Layer Thickness
  • (500~8200nm)±20nm
  • Si Orientation
  • <100>
  • TTV
  • ≤5 μm
  • BOW
  • -50~50 μm
  • Warp
  • ≤50 μm
  • Total Thickness
  • 725±25 μm
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