SOI Substrate
SOI (Silicon on Insulator) forms a semiconductor thin film on an insulator through wafer bonding and thinning process. SOI enables the fabrication of micro-electromechanical systems (MEMS) , such as pressure sensors and optical mirrors. The optimized thinning process significantly improves the uniformity of the top silicon layer, thereby enhancing device sensitivity and integration density.
SOI Substrate

  • Items
  • Specification
  • Diameter
  • 150/200 ± 0.2 mm
  • SI Orientation
  • <100>, <110>, <111>, etc.
  • Dopant Type
  • P/N
  • Device Layer Si Thickness
  • ≥2 μm
  • Front Roughness
  • Ra≤0.2 nm(5 μm*5 μm)
  • BOX Layer Thickness
  • 0.1 ~ 3 μm
  • TTV
  • ≤5 μm
  • BOW
  • -40 ~ 40 μm
  • Warp
  • ≤50 μm
  • Total Thickness
  • 380~675/725 ± 25 μm
CSOI

  • Items
  • Specification
  • Diameter
  • 150/200 ± 0.2 mm
  • SI Orientation
  • <100>, <110>, <111>, etc.
  • Dopant Type
  • P/N
  • Device Layer Si Thickness
  • ≥ 9 μm
  • Edge Chip, Scratch, Crack (visual inspection)
  • None
  • Front Roughness
  • Ra ≤ 0.2 nm (5 μm * 5 μm)
  • BOX Layer Thickness
  • 0.1 ~ 3 μm
  • TTV
  • ≤5 μm
  • BOW
  • -40 ~ 40 μm
  • Warp
  • ≤50 μm
  • Total Thickness
  • 380 ~ 675/725 ± 10 μm
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