SiCOI Substrate
- Items
- Specification
- Diameter
- 150±0.2 mm
- SiC Polytype
- 4H
- SiC Resistivity
- ≥1E8 ohm·cm
- SiC Mean Thickness (21 Pts)
- ≥0.5 μm
- SiC Thickness Range
- ≤2000 A
- Front (C-face) roughness
- Ra≤0.2 nm (5 μm*5 μm)
- Oxide thickness
- (0~3000) ±5% nm
- SI Orientation
- <100>, <110>, <111>, etc.
- Si Type
- P/N
- Edge Chip, Scratch, Crack (visual inspection)
- None
- TTV
- ≤5 μm
- Thickness
- 500-675 μm
