Mono-SiC on Poly-SiC Engineered Substrate is achieved by transferring a P-grade mono-SiC film onto a poly-SiC substrate through our innovative advanced wafer bonding and layer transfer technologies, thereby creating a low-resistivity SiC engineered substrate. This SiC engineered substrate technology can significantly reduce the substrate resistivity while lowering the cost per wafer, ultimately enhancing device performance. It has been validated by leading domestic customers.