Ultra-flat Si Wafer
Through precision thinning and polishing techniques, Si substrates with TTV <0.5 μm are fabricated, enabling high-precision machining processes and advanced process nodes while reducing optical distortion and energy loss. Thanks to their exceptional thickness uniformity, these substrates play an indispensable role in semiconductor, photovoltaic, optical, and MEMS applications.
Ultra-flat Si Wafer (6, 8 inch)

  • Items
  • Specification
  • Diameter
  • 150±0.2 mm
  • Si Orientation
  • <100>, <110>, <111>, etc.
  • Si Type
  • P/N
  • TTV
  • ≤0.5 μm
  • Front roughness
  • Ra≤0.2 nm (5 μm * 5 μm)
  • Items
  • Specification
  • Diameter
  • 200±0.2 mm
  • Si Orientation
  • <100>, <110>, <111>, etc.
  • Si Type
  • P/N
  • TTV
  • ≤0.5 μm
  • Front roughness
  • Ra≤0.2 nm (5 μm * 5 μm)
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sales@isaber-s.com

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